Spin transistor using ferromagnet

US7675103B2 · kind B2 · utility

Assignee

• KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY · KR

Inventors

• Hyun Cheol Koo · Seoul, KR
• Suk Hee Han · Seoul, KR
• Jong Hwa Eom · Seoul, KR
• Joon Yeon Chang · Seoul, KR
• Hyung Jun Kim · Seoul, KR
• Hyun Jung Yi · Seoul, KR

Key dates

• Filing date: Oct 30, 2006
• Grant date: Mar 9, 2010
• Expiry date: Nov 21, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/4755

Abstract

A spin transistor comprises a semiconductor substrate part having a lower cladding layer, a channel layer and an upper cladding layer sequentially stacked therein, a ferromagnetic source and drain on the substrate part, and a gate on the substrate part to control spins of electrons passing through the channel layer. The lower cladding layer comprises a first lower cladding layer and a second lower cladding layer having a higher band gap than that of the first lower cladding layer. The upper cladding layer comprises a first upper cladding layer and a second upper cladding layer having a higher band gap than that of the first upper cladding layer. The source and the drain are buried in an upper surface of the substrate part and extend downwardly to or under the first upper cladding layer.