Void-free damascene copper deposition process and means of monitoring thereof
US7678258B2 · kind B2 · utility
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11References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 10, 2003 |
| Grant date | Mar 16, 2010 |
| Priority date | — |
| Expiry date | Jun 8, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D21/18
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An improved method of stabilizing wet chemical baths is disclosed. Typically such baths are used in processes for treating workpieces, for example, plating processes for plating metal onto substrates. In particular, the present invention relates to copper plating baths. More particularly, the present invention relates to the stability of copper plating baths. More particularly, the present invention relates to prevention of void formation by monitoring the accumulation of deleterious by-products in copper plating baths.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.