Semiconductor device, and method and apparatus for manufacturing the same
US7678711B2 · kind B2 · utility
1Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2005 |
| Grant date | Mar 16, 2010 |
| Priority date | — |
| Expiry date | Feb 17, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A SiO2 film is formed on a semiconductor substrate. Then, a SiN film is formed on the SiO2 film. In this event bis(tertiary butyl amino) silane and NH3 are used as a material gas, and the film forming temperature is set to 600° C. or lower.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.