Display device, method for fabricating thin film transistor and method for fabricating thin film transistor array substrate using the said method
US7679085B2 · kind B2 · utility
9Cited by
1References
25Claims
0Family size
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Key dates
| Filing date | Dec 28, 2006 |
| Grant date | Mar 16, 2010 |
| Priority date | — |
| Expiry date | Mar 1, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/466
Abstract
A method for fabricating a thin film transistor (TFT) on a substrate includes forming a gate electrode; forming a semiconductor layer being insulated from the gate electrode and partially overlapped with the gate electrode; sequentially forming first and second gate insulating layers between the gate electrode and the semiconductor layer, wherein the first gate insulating layer is formed of a material different from the second gate insulating layer and at least one of the first and second gate insulating layers includes a sol-compound; and forming source and drain electrodes at both sides of the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.