Light emitting device

US7679101B2 · kind B2 · utility

Assignees

• TOYODA GOSEI CO., LTD. · JP
• TRIDONIC OPTOELECTRONICS GMBH · AT
• Litec GBR · DE
• LEUCHTSTOFFWERK BREITUNGEN GMBH · DE

Inventors

• Koichi Ota · Chuo, JP
• Atsuo Hirano · Miyoshi, JP
• Akihito Ota · Kita Nagoya, JP
• Stefan Tasch · Fehring, AT
• Peter Pachler · Graz, AT
• Gundula Roth · Levenhagen, DE
• Walter Tews · Greifswald, DE
• Wolfgang Kempfert · Bad Liebenstein, DE
• Detlef Starick · Berlin, DE

Key dates

• Filing date: Nov 30, 2006
• Grant date: Mar 16, 2010
• Expiry date: Nov 30, 2026

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02B20/00
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

The light emitting device has a light emitting diode which is made of a nitride semiconductor and a phosphor which absorbs a part of lights emitted from the light emitting diode and emits different lights with wavelengths other than those of the absorbed lights. The phosphor is made of alkaline earth metal silicate fluorescent material activated with europium.