Vertical profile fixing
US7682516B2 · kind B2 · utility
3Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2005 |
| Grant date | Mar 23, 2010 |
| Priority date | — |
| Expiry date | Aug 4, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have irregular profiles along depths of the photoresist features. The irregular profiles along the depths of the photoresist features of the sidewalls of the photoresist features are corrected comprising at least one cycle, where each cycle comprises a sidewall deposition phase and a profile shaping phase. Feature is etched into the etch layer through the photoresist features. The mask is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.