Sequential chemical vapor deposition
US7682657B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 10, 2003 |
| Grant date | Mar 23, 2010 |
| Priority date | — |
| Expiry date | Sep 11, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on the part to be coated, while the second reactant passes through a radical generator which partially decomposes or activates the second reactant into a gaseous radical before it impinges on the monolayer. This second reactant does not necessarily form a monolayer but is available to react with the monolayer. A pump removes the excess second reactant and reaction products completing the process cycle. The process cycle can be repeated to grow the desired thickness of film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.