Lithography mask and optical lithography method using surface plasmon
US7682755B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2004 |
| Grant date | Mar 23, 2010 |
| Priority date | — |
| Expiry date | Apr 1, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A periodic structure for producing surface plasmon resonance as a result of coupling surface plasmon with light is formed on a side to which the light is to be input, while a fine structure having a periodically or aperiodically arbitrary shape is formed opposite to the periodic structure in order that a pattern a dimension of which is a half or less than a wavelength of light can be transferred to a resist without requiring closely contact of the resist with a mask, or an exposure for a long period of time unlike near field lithography. An electric field transmission layer may be formed between the periodic structure and the fine structure, and the fine structure may be formed on the electric field transmission layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.