Method for fabricating vertical channel transistor in a semiconductor device

US7682885B2 · kind B2 · utility

Assignee

• SK hynix Inc. · KR

Inventors

• Jun-Hee Cho · Yongsan-gu, KR
• Sang-Hoon Park · Seoul, KR

Key dates

• Filing date: Jun 30, 2008
• Grant date: Mar 23, 2010
• Expiry date: Jun 30, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/025

Abstract

A method for fabricating a semiconductor device includes forming a sacrificial layer over a substrate, forming a contact hole in the sacrificial layer, forming a pillar to fill the contact hole. The pillar laterally extends up to a surface of the sacrificial layer and then the sacrificial layer is removed. The method further includes forming a gate dielectric layer over an exposed sidewall of the pillar, and forming a gate electrode over the gate dielectric layer. The gate electrode surrounds the sidewall of the pillar.