Phase change element extension embedded in an electrode

US7682945B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Chung H. Lam · Williston, US
• Matthew J. Breitwisch · Yorktown Heights, US
• Roger W. Cheek · Somers, US
• Alejandro G. Schrott · New York, US
• Matthew D. Moon · Jeffersonville, US

Key dates

• Filing date: Feb 4, 2008
• Grant date: Mar 23, 2010
• Expiry date: Apr 24, 2028

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/90

Abstract

The present invention in one embodiment provides a method of forming a memory device that includes providing an interlevel dielectric layer including a conductive stud having a first width; forming an stack comprising a metal layer and a first insulating layer; forming a second insulating layer atop portions of the interlevel dielectric layer adjacent each sidewall of the stack; removing the first insulating layer to provide a cavity; forming a conformal insulating layer atop the second insulating layer and the cavity; applying an anisotropic etch step to the conformal insulating layer to produce a opening having a second width exposing an upper surface of the metal layer, wherein the first width is greater than the second width; and forming a memory material layer in the opening.