Raised source/drain with super steep retrograde channel
US7683442B1 · kind B1 · utility
Inventors
Key dates
| Filing date | Sep 29, 2006 |
| Grant date | Mar 23, 2010 |
| Priority date | — |
| Expiry date | Nov 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Systems and methods for raised source/drain with super steep retrograde channel. In accordance with a first embodiment of the present invention, in one embodiment, a semiconductor device comprises a substrate comprising a surface and a gate oxide disposed above the surface comprising a gate oxide thickness. The semiconductor device further comprises a super steep retrograde channel region formed at a depth below the surface. The depth is about ten to thirty times the gate oxide thickness. Embodiments in accordance with the present invention may provide a more desirable body biasing voltage to threshold voltage characteristic than is available under the conventional art.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.