Semiconductor device and fabricating method thereof
US7683489B2 · kind B2 · utility
1Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2007 |
| Grant date | Mar 23, 2010 |
| Priority date | — |
| Expiry date | Jun 18, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1461
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a fabricating method thereof are provided. A PMD layer and at least one IMD layer are formed on a semiconductor substrate. A through-electrode penetrates through the PMD layer and the IMD layer, and a connecting electrode connects to the through-electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.