Patent · US Active

Photoresist edge bead removal measurement

US7684611B2 · kind B2 · utility

5Cited by
2References
22Claims
0Family size

Assignee

Inventor

Key dates

Filing dateFeb 16, 2007
Grant dateMar 23, 2010
Priority date
Expiry dateAug 17, 2027

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06T2207/30148
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

An edge bead removal measurement method includes determining an edge of a wafer about a circumference of the wafer. A location of a wafer notch on the edge of the wafer is determined. A location of a center of the wafer is determined. A distance from the edge of the wafer to an edge bead removal line about the circumference of the wafer is determined.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.