Positive resist composition and resist pattern forming method
US7687221B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2005 |
| Grant date | Mar 30, 2010 |
| Priority date | — |
| Expiry date | Aug 6, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/111
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
Disclosed is a positive resist composition which can provide a positive resist composition and a resist pattern forming method, capable of forming a high resolution pattern with reduce LER, the positive resist composition comprising a resin component (A) which has acid dissociable, dissolution inhibiting groups and exhibits increased alkali solubility under the action of an acid, and an acid generator component (B) which generates an acid under exposure, wherein the resin component (A) contains a polymer compound (A1) having a structural unit (a1) derived from hydroxystyrene and a structural unit (a2) derived from an acrylate ester having acid dissociable, dissolution inhibiting groups, a fluorine atom or a fluorinated lower alkyl group being bonded at the α-position.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.