Method of producing a semiconductor device having a magnetic layer formed thereon
US7687283B2 · kind B2 · utility
7Cited by
8References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 23, 2005 |
| Grant date | Mar 30, 2010 |
| Priority date | — |
| Expiry date | Sep 1, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device of a wafer level chip size package type is formed by cutting a semiconductor wafer with a plurality of semiconductor elements formed thereon in pieces. The semiconductor device includes a semiconductor substrate as the semiconductor wafer having a magnetic layer formed on at least one of a front surface and a backside surface of the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.