Fabrication of large grain polycrystalline silicon film by nano aluminum-induced crystallization of amorphous silicon
US7687334B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2007 |
| Grant date | Mar 30, 2010 |
| Priority date | — |
| Expiry date | Mar 23, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02672
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One aspect of the present invention relates to a method for fabricating a polycrystalline silicon film. In one embodiment, the method includes the steps of providing a substrate having a thermally-grown silicon dioxide layer, forming an amorphous silicon film on the thermally-grown silicon dioxide layer of the substrate, forming an aluminum layer on the amorphous silicon film to form a structure having the substrate, the amorphous silicon film and the aluminum layer, and annealing the structure at an annealing temperature for a period of time in an N2 environment with a ramp-up time to crystallize the amorphous silicon film to form a polycrystalline silicon film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.