Method of manufacturing vertical gallium nitride-based light emitting diode
US7687376B2 · kind B2 · utility
3Cited by
7References
8Claims
0Family size
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Key dates
| Filing date | Apr 6, 2007 |
| Grant date | Mar 30, 2010 |
| Priority date | — |
| Expiry date | May 19, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0137
Abstract
A method of manufacturing a vertical GaN-based LED comprises preparing an n-type GaN substrate; sequentially forming an active layer and a p-type nitride semiconductor layer on the n-type GaN substrate through an epitaxial growth method; forming a p-electrode on the p-type nitride semiconductor layer; wet-etching the lower surface of the n-type GaN substrate so as to reduce the thickness of the n-type GaN substrate; forming a flat n-type bonding pad on the wet-etched lower surface of the n-type GaN substrate, the n-type bonding pad defining an n-electrode formation region; and forming an n-electrode on the n-type bonding pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.