Method of fabricating phase change memory device
US7687377B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 5, 2009 |
| Grant date | Mar 30, 2010 |
| Priority date | — |
| Expiry date | Mar 5, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8413
Abstract
In a method of fabricating a phase change memory (PCM) device, a substrate having bottom electrodes formed therein is provided. A first dielectric layer having cup-shaped thermal electrodes is formed over the substrate. Second dielectric layers are formed on the substrate. Stacked structures are formed on the substrate. A PC material film is formed over the substrate and covers the stacked structures and the second dielectric layers. The PC material film is anisotropically etched to form PC material spacers on sidewalls of the stacked structures, and each of the PC material spacers physically and electrically contacts each of the cup-shaped thermal electrodes and top electrodes. The PC material spacers include phase change material. The PC material spacers are over-etched to remove the PC material film on the sidewalls of the second dielectric layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.