Production of a self-aligned CuSiN barrier
US7687399B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2006 |
| Grant date | Mar 30, 2010 |
| Priority date | — |
| Expiry date | Oct 23, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76856
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor product includes a portion made of copper, a portion made of a dielectric and a self-aligned barrier between the copper portion and the dielectric portion. The self-aligned barrier includes a first copper silicide layer comprising predominantly first copper silicide molecules, and a second copper silicide layer comprising predominantly second copper silicide molecules. The proportion of the number of silicon atoms is higher in the second silicide molecules than in the first silicide molecules. The second copper silicide layer is positioned between the copper portion and the first copper silicide layer. A nitride layer may overlie at least part of the first copper silicide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.