Method of removing residue left after plasma process
US7687446B2 · kind B2 · utility
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4References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 6, 2006 |
| Grant date | Mar 30, 2010 |
| Priority date | — |
| Expiry date | Jan 7, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of removing the residue left after a plasma process is described. First, a substrate having at least a material layer thereon is provided. The material layer includes a metal. Then, a fluorine-containing plasma process is performed so that a residue containing the aforesaid metallic material is formed on the surface of the material layer. After that, a wet cleaning operation is performed using a cleaning agent to remove the residue. The cleaning agent is a solution containing water, a diluted hydrofluoric acid and an acid solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.