Method and device of ion source generation
US7687784B2 · kind B2 · utility
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2References
16Claims
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Key dates
| Filing date | May 23, 2008 |
| Grant date | Mar 30, 2010 |
| Priority date | — |
| Expiry date | Sep 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24585
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.