Resistance variable memory cells
US7687793B2 · kind B2 · utility
58Cited by
167References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 2007 |
| Grant date | Mar 30, 2010 |
| Priority date | — |
| Expiry date | Oct 23, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An inverted PCRAM cell is formed by plating the bottom electrode, made of copper for example, with a conductive material, such as silver. Chalcogenide material is disposed over the plated electrode and subjected to a conversion process so that ions from the plated material diffuse into the chalcogenide material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.