Method of improving surface flatness of group-III nitride crystal, substrate for epitaxial growth, and semiconductor device
US7687824B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2005 |
| Grant date | Mar 30, 2010 |
| Priority date | — |
| Expiry date | Nov 17, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3245
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A heating process is performed in a nitrogen atmosphere at a temperature of not less than 1650° C. upon an epitaxial substrate including a single crystal base and an upper layer made of a group-III nitride crystal and epitaxially formed on a main surface of the single crystal base. The result shows that the heating process reduces the number of pits in a top surface to produce the effect of improving the surface flatness of the group-III nitride crystal. The result also shows that the dislocation density in the group-III nitride crystal is reduced to not more than one-half the dislocation density obtained before the heat treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.