Process for patterning capacitor structures in semiconductor trenches

US7687843B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventor

• Michael Rueb · Faak am See, AT

Key dates

• Filing date: Nov 9, 2005
• Grant date: Mar 30, 2010
• Expiry date: Sep 5, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/0387

Abstract

A process for producing structures in a semiconductor zone, has the steps of a) producing a trench (2) in the semiconductor zone (18), b) filling the trench with a photoresist (19), and c) exposing the photoresist (19) using ion beams (20), d) developing the photoresist (19). The energy density and ion dose for the ion beams (20) are selected in such a way that the photoresist (19) is only chemically changed at defined depths, so as to produce two regions, in the first region (21) of which the photoresist has been chemically changed at the defined depths by the ion beams (20), and in the second region of which the photoresist has been left chemically unchanged, so that during the developing step the photoresist is removed in precisely one of the two regions.