Patent · US Active

Semiconductor devices with active regions of different heights

US7687862B2 · kind B2 · utility

6Cited by
15References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 13, 2008
Grant dateMar 30, 2010
Priority date—
Expiry dateMay 13, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a semiconductor device includes a first transistor having a first active area, and a second transistor having a second active area. A top surface of the first active area is elevated or recessed with respect to a top surface of the second active area, or a top surface of the first active area is elevated or recessed with respect to a top surface of at least portions of an isolation region proximate the first transistor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.