Contact electrode for microdevices and etch method of manufacture
US7688167B2 · kind B2 · utility
6Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2006 |
| Grant date | Mar 30, 2010 |
| Priority date | — |
| Expiry date | Jul 19, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01H2061/008
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A contact electrode for a device is made using an etching process to etch the surface of the contact electrode to form a corrugated contact surface wherein the outer edges of at least one grain is recessed from the outer edges of adjacent grains and is recessed by at least about 0.05 μm from the contact plane. By having such a corrugated surface, the contact electrode is likely to contact another conductor with at least one pure metal grain. This etching treatment reduces contact resistance and contact resistance variability throughout many cycles of use of the contact electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.