Phase change memory cell and manufacturing method
US7688619B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2006 |
| Grant date | Mar 30, 2010 |
| Priority date | — |
| Expiry date | Apr 27, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory cell includes first and second electrodes electrically coupled by a phase change element. At least a section of the phase change element comprises a higher reset transition temperature portion and a lower reset transition temperature portion. The lower reset transition temperature portion comprises a phase change region which can be transitioned, by the passage of electrical current therethrough, from generally crystalline to generally amorphous states at a lower temperature than the higher reset transition temperature portion. The phase change element may comprise an outer, generally tubular, higher reset transition temperature portion surrounding an inner, lower reset transition temperature portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.