Measurement of a scattered light point spread function (PSF) for microelectronic photolithography
US7691544B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2006 |
| Grant date | Apr 6, 2010 |
| Priority date | — |
| Expiry date | Dec 9, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70591
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A scattered light point spread function is measured for use in fabricating microelectronic and micromechanical devices using photolithography. In one example, a photosensitive layer of a microelectronic substrate is exposed through a test mask, the test mask having a series of differently sized patterns, each pattern surrounding a central monitor feature, the differently sized patterns each being evenly distributed about its respective central monitor feature. An indication of the exposure of the photosensitive layer is measured for a plurality of the series of differently sized patterns. The exposure indication is compared to the pattern size. The comparison is fitted to a function and the function is applied in correcting photolithography mask layouts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.