CMOS image sensor having double gate insulator therein and method for manufacturing the same

US7691663B2 · kind B2 · utility

Inventor

• Ju-Il Lee · Eden Prairie, US

Key dates

• Filing date: Jan 24, 2007
• Grant date: Apr 6, 2010
• Expiry date: Oct 6, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/803

Abstract

A method for manufacturing a CMOS image sensor includes: preparing a semiconductor substrate incorporating therein a p-type epitaxial layer by epitaxially growing up an upper portion of the semiconductor substrate; forming a pixel array in one predetermined location of the semiconductor substrate, the pixel array having a plurality of transistors and a photodiode therein, wherein each transistor employs a gate insulator with a thickness ranging from 40 Å to 90 Å; and forming a logic circuit in the other predetermined location of the semiconductor substrate, the logic circuit having at least one transistor, wherein the transistor employs a gate insulator with a thickness ranging from 5 Å to 40 Å.