Multi-stage implant to improve device characteristics
US7691700B2 · kind B2 · utility
1Cited by
0References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2007 |
| Grant date | Apr 6, 2010 |
| Priority date | — |
| Expiry date | Jan 6, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
One aspect of the inventors' concept relates to a method of forming a semiconductor device. In this method, a gate structure is formed over a semiconductor body. A source/drain mask is patterned over the semiconductor body implanted source and drain regions are formed that are associated with the gate structure. After forming the implanted source and drain regions, a multi-stage implant is performed on the source and drain regions that comprises at least two implants where the dose and energy of the first implant varies from the dose and energy of the second implant. Other methods and devices are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.