Method for fabricating silicon carbide vertical MOSFET devices

US7691711B2 · kind B2 · utility

Assignee

• General Electric Company · US

Inventors

• Zachary Matthew Stum · Niskayuna, US
• Kevin Sean Matocha · Rexford, US
• Jody A. Fronheiser · Delmar, US
• Ljubisa Dragoljub Stevanovic · Clifton Park, US

Key dates

• Filing date: Jan 31, 2008
• Grant date: Apr 6, 2010
• Expiry date: Oct 3, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

A method of forming a vertical MOSFET device includes forming a first trench within a semiconductor layer of a first polarity, the first trench generally defining a well region of a second polarity opposite the first polarity; growing a first epitaxial well layer of the second polarity over the original semiconductor layer; growing a second epitaxial source contact layer of the first polarity over the well layer; forming a second trench through the source contact layer and at least a portion of the well layer; growing a third epitaxial layer of the second polarity over the source contact layer; and planarizing at least the first and second epitaxial layers so as to expose an upper surface of the original semiconductor layer, wherein a top surface of the third epitaxial layer is substantially coplanar with a top surface of the source contact layer prior to ohmic contact formation.