Vertical nanotube semiconductor device structures and methods of forming the same

US7691720B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Toshiharu Furukawa · South Burlington, US
• Mark C. Hakey · Saint Albans, US
• Steven J. Holmes · Colchester, US
• David V. Horak · South Burlington, US
• Charles W. Koburger, III · Delmar, US
• Peter H. Mitchell · Jericho, US
• Larry Nesbit · Farmington, US

Key dates

• Filing date: Oct 29, 2007
• Grant date: Apr 6, 2010
• Expiry date: Feb 2, 2028

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/742
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Vertical device structures incorporating at least one nanotube and methods for fabricating such device structures by chemical vapor deposition. Each nanotube is grown by chemical vapor deposition catalyzed by a catalyst pad and encased in a coating of a dielectric material. Vertical field effect transistors may be fashioned by forming a gate electrode about the encased nanotubes such that the encased nanotubes extend vertically through the thickness of the gate electrode. Capacitors may be fashioned in which the encased nanotubes and the corresponding catalyst pad bearing the encased nanotubes forms one capacitor plate.