Minimizing low-k dielectric damage during plasma processing

US7691736B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Michael Beck · Milpitas, US
• John A. Fitzsimmons · Poughkeepsie, US
• Karl Hornik · Hopewell Junction, US
• Darryl D. Restaino · Modena, US

Key dates

• Filing date: Feb 10, 2006
• Grant date: Apr 6, 2010
• Expiry date: Jun 21, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76834
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of the invention provide a semiconductor device having dielectric material and its method of manufacture. A method comprises a short (≦2 sec) flash activation of an ILD surface followed by flowing a precursor such as silane, DEMS, over the activated ILD surface. The precursor reacts with the activated ILD surface thereby selectively protecting the ILD surface. The protected ILD surface is resistant to plasma processing damage. The protected ILD surface eliminates the requirement of using a hard mask to protect a dielectric from plasma damage.