Deposition of complex nitride films
US7691757B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2007 |
| Grant date | Apr 6, 2010 |
| Priority date | — |
| Expiry date | Nov 25, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32053
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods are provided for pulsed chemical vapor deposition (CVD) of complex nitrides, such as ternary metal nitrides. Pulses of metal halide precursors are separated from one another and nitrogen-containing precursor is provided during the metal halide precursor pulses as well as between the metal halide precursor pulses. Two different metal halide precursors can be provided in simultaneous pulses, alternatingly, or in a variety of sequences. The nitrogen-containing precursor, such as ammonia, can be provided in pulses simultaneously with the metal halide precursors and between the metal halide precursors, or continuously throughout the deposition. Temperatures can be kept between about 300° C. and about 700° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.