Reactive sputtering process for optimizing the thermal stability of thin chalcogenide layers
US7692175B2 · kind B2 · utility
3Cited by
5References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2005 |
| Grant date | Apr 6, 2010 |
| Priority date | — |
| Expiry date | May 22, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8825
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chalcogenide layer includes a composition of compounds having the formula MmX1-m, where M denotes one or more elements selected from the group consisting of group IVb elements of the periodic system, group Vb elements of the periodic system and transition metals, X denotes one or more elements selected from the group consisting of S, Se and Te, and m has a value of between 0 and 1. The chalcogenide layer further includes an oxygen or nitrogen content in the range from 0.001 atomic % to 75 atomic %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.