Thomas Happ
137Patents
20h-index
62Co-inventors
89Inventor score
Filing activity: Nov 28, 2003 → Sep 22, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7166533B2 | Phase change memory cell defined by a pattern shrink material process | Electricity | 200 | Expired |
| US7214958B2 | Phase change memory cell with high read margin at low power operation | Physics | 199 | Expired |
| US7426134B2 | Sense circuit for resistive memory | Physics | 102 | Active |
| US7405418B2 | Memory device electrode with a surface structure | Physics | 80 | Expired |
| US7515461B2 | Current compliant sensing architecture for multilevel phase change memory | Physics | 77 | Active |
| US7460394B2 | Phase change memory having temperature budget sensor | Physics | 44 | Expired |
| US7215564B2 | Semiconductor memory component in cross-point architecture | Physics | 41 | Expired |
| US7417245B2 | Phase change memory having multilayer thermal insulation | Physics | 40 | Expired |
| US7023008B1 | Resistive memory element | Electricity | 37 | Expired |
| US7324365B2 | Phase change memory fabricated using self-aligned processing | Electricity | 33 | Expired |
| US7405964B2 | Integrated circuit to identify read disturb condition in memory cell | Physics | 32 | Active |
| US7796424B2 | Memory device having drift compensated read operation and associated method | Physics | 31 | Active |
| US7372725B2 | Integrated circuit having resistive memory | Physics | 29 | Expired |
| US7619917B2 | Memory cell with trigger element | Physics | 28 | Active |
| US7453081B2 | Phase change memory cell including nanocomposite insulator | Emerging Cross-Sectional Technologies | 27 | Active |
| US7623401B2 | Semiconductor device including multi-bit memory cells and a temperature budget sensor | Physics | 25 | Active |
| US7113424B2 | Energy adjusted write pulses in phase-change memories | Physics | 22 | Expired |
| US7545668B2 | Mushroom phase change memory having a multilayer electrode | Electricity | 21 | Active |
| US8138028B2 | Method for manufacturing a phase change memory device with pillar bottom electrode | Electricity | 21 | Active |
| US7495946B2 | Phase change memory fabricated using self-aligned processing | Electricity | 20 | Expired |
| US7539050B2 | Resistive memory including refresh operation | Physics | 20 | Active |
| US6972427B2 | Switching device for reconfigurable interconnect and method for making the same | Electricity | 19 | Expired |
| US7593255B2 | Integrated circuit for programming a memory element | Physics | 17 | Active |
| US7838860B2 | Integrated circuit including vertical diode | Electricity | 17 | Active |
| US7929336B2 | Integrated circuit including a memory element programmed using a seed pulse | Physics | 17 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.