Wide-bandgap semiconductor devices
US7692198B2 · kind B2 · utility
0Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2007 |
| Grant date | Apr 6, 2010 |
| Priority date | — |
| Expiry date | Nov 27, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A device 100 comprising a substrate 115 having crystal-support-structures 110 thereon, and a III-V crystal 210. The III-V crystal is on a single contact region 140 of one of the crystal-support-structures. An area of the contact region is no more than about 50 percent of a surface area 320 of the III-V crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.