III-V nitride semiconductor device comprising a concave shottky contact and an ohmic contact
US7692298B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2005 |
| Grant date | Apr 6, 2010 |
| Priority date | — |
| Expiry date | Jun 8, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/60
Abstract
A two-dimensional carrier is generated in the vicinity of an interface that is a hetero interface between a semiconductor layer and a semiconductor layer. Two concave portions are formed so as to extend from a primary surface as far as the interface. An electrode that is made of metal and provides a Schottky junction with the semiconductor layers is formed on a bottom surface and a side surface of the concave portion. An electrode that is made from metal and provides a low resistance contact with the semiconductor layers and is also in low resistance contact therewith is formed on the bottom surface and side surface of the concave portion. As a result, a semiconductor device is provided in which contact resistance between the electrodes and the semiconductor layers is reduced and high frequency characteristics are improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.