Flash memory devices that utilize age-based verify voltages to increase data reliability and methods of operating same
US7692970B2 · kind B2 · utility
26Cited by
4References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2007 |
| Grant date | Apr 6, 2010 |
| Priority date | — |
| Expiry date | May 24, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3454
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of verifying a programmed condition of a flash memory device, being comprised of: determining a level of an additional verifying voltage in response to the number of programming/erasing cycles of memory cells; conducting a verifying operation to programmed memory cells with an initial verifying voltage lower than the additional verifying voltage; and selectively conducting an additional verifying operation with the additional verifying voltage to the program-verified memory cells in response to the number of programming/erasing cycles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.