Method for co-alignment of mixed optical and electron beam lithographic fabrication levels
US7696057B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 2, 2007 |
| Grant date | Apr 13, 2010 |
| Priority date | — |
| Expiry date | Oct 27, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for aligning a first set of features of a fabrication level of an integrated circuit chip to an electron beam alignment target including a high atomic weight layer formed in a substrate and forming the first set of features using electron beam lithography and for aligning a second set of features of the same fabrication level of the integrated circuit chip to an optical alignment target formed in the substrate and forming the second set of features using photolithography, the optical alignment target itself is aligned to the electron beam alignment target. Also a method of forming and a structure of the electron beam alignment target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.