Bottom electrode contacts for semiconductor devices and methods of forming same

US7696077B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventor

• Jun Liu · 红钢城街道, CN

Key dates

• Filing date: Jul 14, 2006
• Grant date: Apr 13, 2010
• Expiry date: Sep 1, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/884

Abstract

Bottom electrode contact structures for a semiconductor assembly and a method for forming same are described. An exemplary semiconductor device comprises electrode contact structures in a phase change memory device. The phase change memory device comprising a phase change cell is made up of a bottom electrode contact structure comprising a phase change material liner connecting between a conductive top electrode and a conductive bottom electrode where the resulting ultra-small contacts are determined by the intersection of the sidewall bottom electrode and the phase change liner.