Storage nodes, phase change memory devices, and methods of manufacturing the same
US7696507B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2007 |
| Grant date | Apr 13, 2010 |
| Priority date | — |
| Expiry date | Apr 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
Abstract
A storage node may include a bottom electrode contact layer, a phase change layer connected to the bottom electrode contact layer, and a top electrode layer connected to the phase change layer. The bottom electrode contact layer may protrude toward the phase change layer. A phase change memory device may include a switching device and the storage node. The switching device may be connected to the bottom electrode contact layer. A method of manufacturing the storage node may include forming a via hole in an insulating interlayer, at least partially filling the via hole to form a bottom electrode contact layer, protruding the bottom electrode contact layer from the via hole, and forming a phase change layer that covers the bottom electrode contact layer. A method of manufacturing a phase change memory device may include forming the switching device on a substrate and manufacturing the storage node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.