Solid state electrolyte memory device and method of fabricating the same
US7696509B2 · kind B2 · utility
1Cited by
3References
19Claims
0Family size
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Key dates
| Filing date | Nov 20, 2007 |
| Grant date | Apr 13, 2010 |
| Priority date | — |
| Expiry date | Oct 2, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8822
Abstract
A method of fabricating a solid state electrolytes memory device is provided. An insulator layer is formed on a substrate. A conductive layer is formed on the insulator layer. At least two openings partially overlapped and capable of communicating with each other are formed in the conductive layer, so that the conductive layer forms at least a pair of tip electrodes. Thereafter, solid state electrolytes are filled in the openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.