Memory element and memory device
US7696511B2 · kind B2 · utility
5Cited by
0References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2008 |
| Grant date | Apr 13, 2010 |
| Priority date | — |
| Expiry date | Sep 30, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
A memory element having a storage layer containing an ion source layer between a first electrode and a second electrode is provided. The memory element stores information by changing an electrical characteristic of the storage layer, wherein at least Zr is added to the ion source layer as a metal element together with an ion conducting material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.