Structure and method for a fast recovery rectifier structure
US7696540B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2006 |
| Grant date | Apr 13, 2010 |
| Priority date | — |
| Expiry date | Mar 24, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/676
Abstract
An apparatus and method for a fast recovery rectifier structure. Specifically, the structure includes a substrate of a first dopant. A first epitaxial layer lightly doped with the first dopant is coupled to the substrate. A first metallization layer is coupled to the first epitaxial layer. A plurality of trenches is recessed into the first epitaxial layer, each of which is coupled to the metallization layer. The device also includes a plurality of wells each doped with a second dopant type, wherein each well is formed beneath and adjacent to a corresponding trench. A plurality of oxide layers is formed on walls and a bottom of a corresponding trench. A plurality of channel regions doped with the first dopant is formed within the first epitaxial layer between two corresponding wells. Each of the plurality of channel regions is more highly doped with the first dopant than the first epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.