Ultrafast recovery diode

US7696598B2 · kind B2 · utility

Assignee

• QSpeed Semiconductor Inc. · US

Inventors

• Richard Francis · Manhattan Beach, US
• Jian Li · Beijing, CN
• Yang Fan · Sunnyvale, US
• Eric Johnson · Santa Clara, US

Key dates

• Filing date: Dec 27, 2005
• Grant date: Apr 13, 2010
• Expiry date: Dec 27, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/50

Abstract

An ultrafast recovery diode. In a first embodiment, a rectifier device comprises a substrate of a first polarity, a lightly doped layer of the first polarity coupled to the substrate and a metallization layer disposed with the lightly doped layer. The ultrafast recovery diode includes a plurality of wells, separated from one another, formed in the lightly doped layer, comprising doping of a second polarity. The plurality of wells connect to the metallization layer. The ultrafast recovery diode further includes a plurality of regions, located between wells of said plurality of wells, more highly doped of the first polarity than the lightly doped layer.