Trench MOSFET
US7696599B2 · kind B2 · utility
2Cited by
9References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2004 |
| Grant date | Apr 13, 2010 |
| Priority date | — |
| Expiry date | Jan 7, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A trench MOSFET with drain (8), drift region (10) body (12) and source (14). In order to improve the figure of merit for use of the MOSFET as control and sync FETs, the trench (20) is partially filled with dielectric (24) adjacent to the drift region (10) and a graded doping profile is used in the drift region (10).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.