Method of reclaiming silicon wafers
US7699997B2 · kind B2 · utility
1Cited by
14References
14Claims
0Family size
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Key dates
| Filing date | Oct 3, 2003 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | Jul 14, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/324
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of reclaiming silicon wafers including a film removal process, a polishing process, and a cleaning process, wherein a heating/removal process for removing a silicon wafer surface part by heating at 150-300° C. for 20 minutes to 5 hours is further included between the film removal process and the polishing process is provided. The present invention provides a useful method of reclaiming silicon wafers that removes Cu not only deposited on a surface but also penetrated inside of a silicon wafer, and does not give Cu contamination inside of the silicon wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.