Method for fabricating three-dimensional photonic crystal
US7700390B2 · kind B2 · utility
5Cited by
8References
11Claims
0Family size
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Key dates
| Filing date | May 12, 2008 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | Dec 2, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/1225
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for fabricating a three-dimensional photonic crystal comprises the steps of: forming a dielectric thin film; injecting ions selectively into the dielectric thin film by using a focus ion beam to form a mask on the dielectric thin film; forming a pattern by selectively removing an exposed part of the dielectric thin film at which the mask is not formed on the dielectric thin film; forming a sacrificial layer on the dielectric thin film having the pattern formed therein; and flattening the sacrificial layer formed on the dielectric thin film until the pattern comes to the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.