Method of forming an embedded silicon carbon epitaxial layer
US7700424B2 · kind B2 · utility
2Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2008 |
| Grant date | Apr 20, 2010 |
| Priority date | — |
| Expiry date | Apr 11, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming embedded epitaxial layers containing silicon and carbon are disclosed. Specific embodiments pertain to the formation embedded epitaxial layers containing silicon and carbon on silicon wafers. In specific embodiments an epitaxial layer of silicon and carbon is non-selectively formed on a substrate or silicon wafer, portions of this layer are removed to expose the underlying substrate or silicon wafer, and an epitaxial layer containing silicon is formed on the exposed substrate or silicon wafers. In specific embodiments, gates are formed on the resulting silicon-containing epitaxial layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.